| PART |
Description |
Maker |
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM53216000BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5328000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53232004CK KMM53232004CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53632004CK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| GMM7321010CNS-6 GMM7321010CNS-8 |
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1M X 32 EDO DRAM MODULE, 80 ns, SMA72 SIMM-72
|
Switchcraft, Inc.
|
| STI91000-80TOH STI91000-60GOI STI91000-70GPS STI91 |
1M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30 SIMM-30
1M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30 SIMM-30
1M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30 SIMM-30
|
KODENSHI, CORP.
3M Company
|
| KMM53616004BKG KMM53616004BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5322204C2WG KMM5322204C2W |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16，每1000刷新V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KMM5324100CK KMM5324000CK |
(KMM5324100CK / KMM5324000CK) 4MBx32 DRAM Simm Using 4MBx4
|
Samsung Semiconductor
|
